Paper Title:
Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC
  Abstract

In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed by rapid thermal annealing checking the possible chemical reactions at the metal semiconductor interfaces. Micro x-ray diffraction and micro Raman techniques have been performed in order to study the interface micro structural evolution. Inter diffusion of each element at the Ni - SiC interface was examined using Auger spectroscopy. Electrical measurements have been performed in order to check the ohmic behavior of the contacts. Finally, a correlation between microstructures evolution and electrical behaviors is reported.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
733-736
DOI
10.4028/www.scientific.net/MSF.483-485.733
Citation
S. Ferrero, A. Albonico, U. M. Meotto, G. Rambolà, S. Porro, F. Giorgis, D. Perrone, L. Scaltrito, E. Bontempi, L.E. Depero, G. Richieri, L. Merlin, "Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 733-736, 2005
Online since
May 2005
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$32.00
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