Paper Title:
The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection
  Abstract

This paper presents much more details on the process of etching n and p type SiC using a dc saddle field source. Here is described a method for stabilizing the dc discharge by adding controlled flow of O2 to SF6 in the source chamber. This kind of etching is used to fabricate 4H-SiC p-i-n diodes with a junction periphery protection. The effect of the junction periphery protection, the source power that terminates the etching process and testing environment on the breakdown voltage are investigated. The optimised p-i-n diodes exhibit a stable reverse bias operation with a breakdown voltage of 1700 V.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
769-772
DOI
10.4028/www.scientific.net/MSF.483-485.769
Citation
G. Sarov, T. Cholakova, R. Kakanakov, "The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery Protection", Materials Science Forum, Vols. 483-485, pp. 769-772, 2005
Online since
May 2005
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$32.00
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