Paper Title:
High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
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Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
77-80
DOI
10.4028/www.scientific.net/MSF.483-485.77
Citation
J. Zhang, J. Mazzola, C. Hoff, Y. Koshka, J. B. Casady, "High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor", Materials Science Forum, Vols. 483-485, pp. 77-80, 2005
Online since
May 2005
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