Paper Title:
Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching
  Abstract

The defects were investigated in p+nn+ 4H-SiC diodes by observing the forward-biasinduced light emission through the substrate. The spatial intensity distribution, the temporal evolution and the spectral content of the electroluminescence (EL) signal have been measured in order to detect, identify and understand the defect formation during forward-bias application. It was found that, exept from the dislocations inside the epilayers, mesa etching is a main cause for the formation of extended defects. To our knowledge, for the first time, reduction of mesa-etchinginduced defects is shown in this investigation.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
773-776
DOI
10.4028/www.scientific.net/MSF.483-485.773
Citation
N. Camara, A. Thuaire, E. Bano, K. Zekentes, "Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching ", Materials Science Forum, Vols. 483-485, pp. 773-776, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Stanislav I. Soloviev, Peter M. Sandvik, Alexey Vertiatchikh, K. Dovidenko, Ho Young Cha
Abstract:In this work, we observed and investigated electro-luminescence (EL) from defects in 4H-SiC avalanche photodiodes. The EL irradiance...
1211
Authors: Serguei I. Maximenko, Jaime A. Freitas, Yoosuf N. Picard, Paul B. Klein, Rachael L. Myers-Ward, Kok Keong Lew, Peter G. Muzykov, D. Kurt Gaskill, Charles R. Eddy, Tangali S. Sudarshan
Abstract:The effect of various types of in-grown stacking faults and threading screw/edge type dislocations on carrier lifetime and diffusion lengths...
211
Authors: Fujiwara Hirokazu, Masaki Konishi, T. Ohnishi, T. Nakamura, Kimimori Hamada, T. Katsuno, Y. Watanabe, Takeshi Endo, Takeo Yamamoto, K. Tsuruta, Shoichi Onda
Abstract:The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV...
694
Authors: Yukari Ishikawa, Koji Sato, Yoshihiro Okamoto, Noritaka Hayashi, Yong Zhao Yao, Yoshihiro Sugawara
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Shallow defects, which were induced by mechanical treatment, on 4H-SiC wafers were investigated. The density and the distribution in depth of...
383
Authors: O.Y. Goue, Yu Yang, J.Q. Guo, Balaji Raghothamachar, Michael Dudley, J.L. Hosteller, Rachael L. Myers-Ward, Paul B. Klein, D. Kurt Gaskill
2.2 Point and Extended Defects
Abstract:Lifetime maps for two 4H-SiC epi-wafers (samples 1 and 2) were recorded using microwave photoconductive decay (μPCD) measurements and...
297