Paper Title:
Metal Bonding in SiC Based Substrates
  Abstract

QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
781-784
DOI
10.4028/www.scientific.net/MSF.483-485.781
Citation
I. Matko, B. Chenevier, R. Madar, H. Roussel, S. Coindeau, F. Letertre, C. Richtarch, L. Di Cioccio, "Metal Bonding in SiC Based Substrates", Materials Science Forum, Vols. 483-485, pp. 781-784, 2005
Online since
May 2005
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Price
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