Paper Title:
4H-SiC DMOSFETs for High Speed Switching Applications
  Abstract

Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4H-SiC device. Therefore, the total drain charge and switching losses are much lower for the 4H-SiC power device. A 2.3 kV, 13.5 mW-cm2 4H-SiC power DMOSFET with a device area of 2.1 mm x 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS of 2.6 V. Approximately an order of magnitude lower parasitic capacitance values, as compared to those of commercially available silicon power MOSFETs, were measured for the 4H-SiC power DMOSFET. This suggests that the 4H-SiC DMOSFET can provide an order of magnitude improvement in switching performance in high speed switching applications.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
797-800
DOI
10.4028/www.scientific.net/MSF.483-485.797
Citation
S. H. Ryu, S. Krishnaswami, M. K. Das, J. Richmond, A. K. Agarwal, J. W. Palmour, J. D. Scofield, "4H-SiC DMOSFETs for High Speed Switching Applications", Materials Science Forum, Vols. 483-485, pp. 797-800, 2005
Online since
May 2005
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Price
$32.00
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