Paper Title:
Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
  Abstract

Optimum dose designing for 4H-SiC (0001) two-zone RESURF MOSFETs is investigated by device simulation and fabrication. Simulated results suggest that negative charge at the SiC/SiO2 interface significantly influences breakdown voltage. Simulation has also showed that breakdown voltage strongly depends on LDD (Lightly-Doped Drain) dose. The dose dependencies of the breakdown voltage experimentally obtained are in good agreement with the device simulation. A RESURF MOSFET, processed by N2O oxidation, with an optimized dose blocks 1080V and has a low on-resistance of 79 mcm2 at a gate oxide field of 3.0 MV/cm, which is the best 4H-SiC RESURF MOSFET ever reported.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
809-812
DOI
10.4028/www.scientific.net/MSF.483-485.809
Citation
H. Kawano, T. Kimoto, J. Suda, H. Matsunami, "Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication", Materials Science Forum, Vols. 483-485, pp. 809-812, 2005
Online since
May 2005
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Price
$32.00
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