Paper Title:
Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
  Abstract

In our previous paper [1], we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel mobility. In this paper, we experimentally show that channel mobility is enhanced by the epi-channel. On varying the thickness of the epi-channel, the channel mobility improved from a few cm2/Vs to 100 cm2/Vs. Finally, we show that the “Normally-off” accumulation MOSFET with a 720 V breakdown voltage has a low on-resistance (10.4 m1cm2) and that the 3 × 3 mm2 accumulation MOSFET operates over 10 A and its on-resistance is 19 m1cm2.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
817-820
DOI
10.4028/www.scientific.net/MSF.483-485.817
Citation
E. Okuno, T. Endo, H. Matsuki, T. Sakakibara, H. Tanaka, "Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET", Materials Science Forum, Vols. 483-485, pp. 817-820, 2005
Online since
May 2005
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$32.00
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