Paper Title:
Short-Channel Effects in 4H-SiC MOSFETs
  Abstract

Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type 4H-SiC (0001), (000-1) and (11-20) faces.^Short-channel effects such as punchthrough behavior, decrease of threshold voltage and deterioration of subthreshold characteristics are observed. Furthermore, the critical channel lengths below which short-channel effects occur are analyzed as a function of p-body doping and oxide thickness by using device simulation. The critical channel lengths in the fabricated SiC MOSFETs are in agreement with those obtained from the device simulation. The results are also in agreement with the empirical relationship for Si MOSFETs.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
821-824
DOI
10.4028/www.scientific.net/MSF.483-485.821
Citation
M. Noborio, Y. Kanzaki, J. Suda, T. Kimoto, H. Matsunami, "Short-Channel Effects in 4H-SiC MOSFETs", Materials Science Forum, Vols. 483-485, pp. 821-824, 2005
Online since
May 2005
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Price
$32.00
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