Paper Title:
Performance of SiC Cascode Switches with Si MOS Gate
  Abstract

The behavior of the MOS switch and of two cascode configurations are evaluated, by using OR-CAD simulations, and the resulting data are comparatively presented. By analytical and numerical investigations, the superior performance of the multiple cascode circuit is demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
825-828
DOI
10.4028/www.scientific.net/MSF.483-485.825
Citation
G. Brezeanu, C. Boianceanu, M. Brezeanu, A. Mihaila, F. Udrea, G. Amaratunga, "Performance of SiC Cascode Switches with Si MOS Gate", Materials Science Forum, Vols. 483-485, pp. 825-828, 2005
Online since
May 2005
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$32.00
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