Paper Title:
Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping
  Abstract

This paper reports on the degradation of inversion channel mobility of SiC MOSFET caused by the increase of channel doping. SiC MOSFETs were fabricated on three wafers, the doping concentrations of the epitaxial layer of which were 16 10 2× cm-3 (sample A), 17 10 2× cm-3 (sample B) and 17 10 4× cm-3 (sample C). The field effect mobility sharply decreases as the doping concentration increases. Hall mobility measurements have been done to investigate the degradation of the mobility due to doping. The measurement of sample A shows that, as a consequence of the decrease of the free carrier density due to MOS interface traps, the Hall mobility is as much as a factor of ten higher than the field effect mobility. In contrast, in regard to the measurement of sample B and sample C, we encountered unstable Hall voltage and could not obtain reproducible results. This implies that such high-density traps are generated that a channel disappears in the higher-doping samples.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
829-832
DOI
10.4028/www.scientific.net/MSF.483-485.829
Citation
T. Hatakeyama, T. Watanabe, J. Senzaki, M. Kato, K. Fukuda, T. Shinohe, K. Arai, "Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping", Materials Science Forum, Vols. 483-485, pp. 829-832, 2005
Online since
May 2005
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