Paper Title:
High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
  Abstract

Lateral inversion channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were manufactured on 6H-SiC and two gate oxidation recipes were compared. In one case the gate oxide was grown in N2O using quartz environment. The resulting peak field-effect mobility was µFE=43 cm2/Vs. In the other case the gate oxide was grown in oxygen using alumina environment and the resulting peak field-effect mobility was µFE=130 cm2/Vs. Oxidizing in an environment made from sintered alumina introduces contaminants into the oxide that effect the oxidation in several^ways. The oxidation rate is increased and the resulting SiC/SiO2 interface allows higher inversion channel mobility.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
837-840
DOI
10.4028/www.scientific.net/MSF.483-485.837
Citation
F. Allerstam, G. Gudjónsson, H.Ö. Ólafsson, E. Ö. Sveinbjörnsson, T. Rödle, R. Jos, "High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment", Materials Science Forum, Vols. 483-485, pp. 837-840, 2005
Online since
May 2005
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$32.00
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