Paper Title:
High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
  Abstract

We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
841-844
DOI
10.4028/www.scientific.net/MSF.483-485.841
Citation
E. Ö. Sveinbjörnsson, H.Ö. Ólafsson, G. Gudjónsson, F. Allerstam, P. Å. Nilsson, M. Syväjärvi, R. Yakimova, C. Hallin, T. Rödle, R. Jos, "High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material", Materials Science Forum, Vols. 483-485, pp. 841-844, 2005
Online since
May 2005
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