Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD

Matsunami, Hiroyuki; Wada, Keiji; Kimoto, Tsunenobu; Nishikawa, Kimito

Paper Titles

New Achievements on CVD Based Methods for SiC Epitaxial Growth, p.67
Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive, p.73
High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor, p.77
Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor, p.81
Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD, p.85
4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles, p.89
2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method, p.93
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates, p.97
Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor, p.101

Home > Materials Science Forum > Silicon Carbide and Related Materials 2004 > Improved Surface Morphology and Background Doping...

Paper Title:

Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD

Periodical	Materials Science Forum (Volumes 483 - 485)
Main Theme	Silicon Carbide and Related Materials 2004
Edited by	Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages	85-88
DOI	10.4028/www.scientific.net/MSF.483-485.85
Citation	Keiji Wada et al., 2005, Materials Science Forum, 483-485, 85
Online since	May, 2005
Authors	Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
Keywords	C Face, Deep Level, Homoepitaxy, Hot-Wall CVD
Price	US$ 28,-

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Abstract

4H-SiC layers have been homoepitaxially grown on off-axis 4H-SiC(000-1) under various conditions by horizontal hot-wall CVD. Improvement of surface morphology and reduction of background doping concentration have been achieved. Surface morphology grown on the (000-1) C face strongly depends on the C/Si ratio at 1500 °C, and hillock-like surface defects can be eliminate by increasing growth temperature to 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions even on the (000-1) C face. The lowest doping concentration has been determined to be 6.0x1014 cm-3. A trial of high-speed growth on the (000-1) C face and deep level analysis are also discussed.