Paper Title:
High Power Lateral Epitaxy MESFET Technology in Silicon Carbide
  Abstract

High impedance silicon carbide power RF transistors are reported, which use the technology of Lateral Epitaxy Metal-Semiconductor FET (LEMES). The LEMES transistor utilizes a heavily doped buried depletion stopper to increase output impedance and breakdown voltage and to eliminate undesirable hot-carrier trapping effects. A power density of 2-3 W/mm at 2 GHz is routinely achieved resulting in a total output power of 10W for packaged components. The value of input and output impedance is around 50 Ohms for a frequency of around 2 GHz.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
853-856
DOI
10.4028/www.scientific.net/MSF.483-485.853
Citation
A. O. Konstantinov, C. I. Harris, I.C. Ray, "High Power Lateral Epitaxy MESFET Technology in Silicon Carbide", Materials Science Forum, Vols. 483-485, pp. 853-856, 2005
Online since
May 2005
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Saptharishi Sriram, A. Ward, C. Janke, T.S. Alcorn, H. Hagleitner, Jason Henning, K. Wieber, Jason R. Jenny, Joseph J. Sumakeris, S.T. Allen
1205
Authors: Ivan Perez-Wurfl, Feng Zhao, Chih Fang Huang, John Torvik, Bart Van Zeghbroeck
Abstract:We report for the first time on RF SiC BJTs fabricated on semi-insulating (SI) substrates with L-band performance. Small-periphery (4x150μm)...
1421
Authors: Per Åke Nilsson, Niklas Rorsman, Mattias Südow, Kristoffer Andersson, Hans Hjelmgren, Herbert Zirath
Abstract:In order to increase the output power and drain efficiency, MESFETs in SiC have been made with a double gate recess technique. Typical...
1227
Authors: G. Gudjónsson, Fredrik Allerstam, H.Ö. Ólafsson, Per Åke Nilsson, Hans Hjelmgren, Kristoffer Andersson, Einar Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, R. Jos
Abstract:We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors...
1277
Authors: Zhi Qun Cheng, Li Wei Jin, Wen Shi
Chapter 1: Microelectronics, Electrocircuit and Materials
Abstract:A broadband power amplifier module based on GaN HEMT operating Ku band is designed. TGF2023-02 Chip of GaN HEMT from TriQuint is modeled...
39