Paper Title:
Broadband RF SiC MESFET Power Amplifiers
  Abstract

We have designed and characterized preliminary versions of two wideband SiC-based RF power amplifiers using SiC MESFETs from Chalmers University and Lateral Epitaxy SiC MESFETs fabricated at AMDS AB. When optimized transistors are available they will be used in the design of amplifiers for a 100 – 500 MHz multifunction EW system.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
857-860
DOI
10.4028/www.scientific.net/MSF.483-485.857
Citation
R. Jonsson, S. Rudner, "Broadband RF SiC MESFET Power Amplifiers", Materials Science Forum, Vols. 483-485, pp. 857-860, 2005
Online since
May 2005
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$32.00
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