Paper Title:
Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs
  Abstract

Because SiC does not have velocity overshooting behaviour, the current density of SiC metal-semiconductor field-effect transistors (MESFETs) is restricted by low drift velocity in the parasitic region between source and gate where the applied electric field is low. In addition, the extension of the depletion region toward the drain side at high drain voltages increases the effective channel length and, as a result, lowers the cut-off frequency due to the increased transit time.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
861-864
DOI
10.4028/www.scientific.net/MSF.483-485.861
Citation
H. Y. Cha , Y.C. Choi, L. F. Eastman, M. G. Spencer, L. Ardaravičius, A. Matulionis, O. Kiprijanovič, "Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs", Materials Science Forum, Vols. 483-485, pp. 861-864, 2005
Online since
May 2005
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Price
$32.00
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