Paper Title:
Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
  Abstract

Conductance DLTS measurements have been performed on 4H-SiC MESFETs. A broad band due to electron emission by different levels is observed. An additional “hole-like” level with activation energy of 0.9 eV is obtained in linear regime but not in saturation regime. From the results, it is proposed that this “hole-like” signal is due to capture of electron present at a conductive SiC/SiO2 interfacial layer.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
865-868
DOI
10.4028/www.scientific.net/MSF.483-485.865
Citation
J. M. Bluet, M. Gassoumi, I. Dermoul, F. Chekir, H. Maaref, G. Guillot, E. Morvan, C. Dua, C. Brylinski, "Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy", Materials Science Forum, Vols. 483-485, pp. 865-868, 2005
Online since
May 2005
Keywords
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