Paper Title:
Wannier-Stark Localization Effects in 6H-SiC JFETs
  Abstract

The dependence of short-circuit photo-current on the voltage applied to the source-gate (or drain-gate) junction Vg was studied. One should consider the fact that the photo-current begins to drop with voltage exceeding certain threshold value. Thus the 6H-SiC JFET behaves uncommonly. Moreover Isd ~Vg dependence shows a drop Isd to zero at a condition that there is a non-pinched-off part of the channel. For a comparison parallel investigations were conducted with two industrial Si JFETs with a structure similar to that of 6H-SiC JFET under study. The results obtained for Si JFETs are trivial for photocurrent and Isd. We believe that the effects observed in 6H-SiC JFET should be attributed to the Wannier-Stark localization regime.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
873-876
DOI
10.4028/www.scientific.net/MSF.483-485.873
Citation
V. I. Sankin, P. P. Shkrebiy, A. A. Lebedev, "Wannier-Stark Localization Effects in 6H-SiC JFETs", Materials Science Forum, Vols. 483-485, pp. 873-876, 2005
Online since
May 2005
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