Paper Title:
Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
  Abstract

A 4H-SiC 600 V class Deep-Implanted gate Vertical JFET (DI-VJFET) is examined. The DI-VJFET exhibited a specific on-resistance of 13 mΩcm2, drain current of 5 A, and a blocking-voltage of 600 V. In this paper, the very high temperature dependence (R.T.~ 400 oC) of the I-V characteristics is measured and the dominant factor of the on-resistance and the blocking-voltage is discussed. Moreover, the switching waveform of SiC DI-VJFET with SiC SBD is measured by using a half bridge, double-pulse circuit with inductive load at R.T. and 200 oC. The turn-off time is 300 ns at an inductance of 4 mH and an external gate resistance of 100 Ω.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
881-884
DOI
10.4028/www.scientific.net/MSF.483-485.881
Citation
M. Mizukami, O. Takikawa, S. Imai, K. Kinoshita, T. Hatakeyama, T. Domon, T. Shinohe, "Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET", Materials Science Forum, Vols. 483-485, pp. 881-884, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath
1125
Authors: X. Zhang, Seo Young Ha, M. Benamara, Marek Skowronski, Joseph J. Sumakeris, Sei Hyung Ryu, Michael J. Paisley, Michael J. O'Loughlin
Abstract:Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional...
327
Authors: Zhen Bing Cai, Min Hao Zhu, Xiu Zhou Lin, Ji Liang Mo, Zhong Rong Zhou
Abstract:Nickel base Ni60 and cobalt base Co-Cr-W coatings were prepared on substrate of refractory alloy steel 4Cr14NiW2Mo by laser-cladding...
878
Authors: Keishi Yamaguchi, Mutsumi Touge, Takayuki Nakano, Junji Watanabe
Abstract:Silicon carbide (SiC) single crystal has many advantages comparing with silicon single crystal, such as wide band-gap, hardness and various...
282
Authors: Xing Bing Ma, Hong Xing Zheng
Chapter 6: Communication and Network
Abstract:A wide-band antenna coupling with an elliptical slot was discussed in this paper. To implement the wide band operation, an elliptical ring...
1594