Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
| Periodical | Materials Science Forum (Volumes 483 - 485) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 885-888 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.885 |
| Citation | J. Neil Merrett et al., 2005, Materials Science Forum, 483-485, 885 |
| Online since | May, 2005 |
| Authors | J. Neil Merrett, John R. Williams, J.D. Cressler, A.P. Sutton, Lin Cheng, V. Bondarenko, Igor Sankin, D. Seale, Michael S. Mazzola, Bharat Krishnan, Yaroslav Koshka, Jeff B. Casady |
| Keywords | 4H-SiC, JFET, Radiation Effects |
| Price | US$ 28,- |
4H-SiC vertical depletion-mode trench JFETs were fabricated, packaged, and then irradiated with either 6.8 Mrad gamma from a 60Co source, a 9x1011 cm-2 dose of 4 MeV protons, or a 5x1013 cm-2 dose of 63 MeV protons. 4H-SiC Schottky diodes were also fabricated, packaged and exposed to the same irradiations. The trench VJFETs have a nominal blocking voltage of 600 V and a forward current rating of 2 A prior to irradiation. On-state and blocking I-V characteristics were measured after irradiation and compared to the pre-irradiation performance. Devices irradiated with 4 MeV proton and gamma radiation showed a slight increase in on resistance and a decrease in leakage current in blocking mode. Devices irradiated with 63 MeV protons, however, showed a dramatic decrease in forward current. DLTS measurements were performed, and the results of these measurements will be discussed as well.
