Paper Title:
4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
  Abstract

Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 1o to 45o has been investigated. On large-off-angled (15o-45o) substrates, very smooth surface morphology is obtained in the wide range of C/Si ratio. The micropipe dissociation during epitaxial growth is observed on 4o-45o off-angled substrates with a low C/Si ratio. The incorporation of nitrogen was dramatically suppressed by increasing C/Si ratio irrespective of substrate’s off-angle.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
89-92
DOI
10.4028/www.scientific.net/MSF.483-485.89
Citation
H. Saitoh, T. Kimoto, "4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles", Materials Science Forum, Vols. 483-485, pp. 89-92, 2005
Online since
May 2005
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Price
$32.00
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