Paper Title:
BVCEO Versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors
  Abstract

The letter presents a set of design curves that relate the open-base breakdown voltage BVCEO to the open emitter breakdown voltage BVCBO for 4H (0001 and 11-20 orientations) and 6H SiC NPN and PNP Bipolar Junction Transistors. We also present design curves pertaining to the variation of BVCEO with base doping and minority carrier diffusion length in the base for (0001) 4H-SiC BJTs for a 4x1015 cm-3 doped and 12µm thick drift layer for both NPN and PNP BJTs.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
893-896
DOI
10.4028/www.scientific.net/MSF.483-485.893
Citation
S. Balachandran, T. P. Chow, A. K. Agarwal, S. Scozzie, K. A. Jones, "BVCEO Versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors", Materials Science Forum, Vols. 483-485, pp. 893-896, 2005
Online since
May 2005
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