Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport |
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| Journal | Materials Science Forum (Volumes 483 - 485) |
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| Volume | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 9-12 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.9 |
| Citation | Thomas Anderson et al., 2005, Materials Science Forum, 483-485, 9 |
| Online since | May, 2005 |
| Authors | Thomas Anderson, Donovan L. Barrett, J. Chen, Ejiro Emorhokpor, A. Gupta, R.H. Hopkins, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback, Wolfgang J. Choyke, Robert P. Devaty, Fei Yan |
| Keywords | Point Defect, Resistivity, Semi-insulating (SI), Silicon Carbide (SiC), Sublimation Growth |
| Abstract | Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed. |
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