Paper Title:
Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
  Abstract

Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
9-12
DOI
10.4028/www.scientific.net/MSF.483-485.9
Citation
T. Anderson, D. L. Barrett, J. Chen, E. Emorhokpor, A. Gupta, R.H. Hopkins, A. E. Souzis, C.D. Tanner, M. Yoganathan, I. Zwieback, W. J. Choyke, R. P. Devaty, F. Yan, "Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport", Materials Science Forum, Vols. 483-485, pp. 9-12, 2005
Online since
May 2005
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$32.00
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