Paper Title:
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
  Abstract

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
901-904
DOI
10.4028/www.scientific.net/MSF.483-485.901
Citation
S. Krishnaswami, A. K. Agarwal, C. Capell, J. Richmond, S. H. Ryu, J. W. Palmour, S. Balachandran, T. P. Chow, S. Baynes, B. Geil, K. A. Jones, C. Scozzie, "1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs", Materials Science Forum, Vols. 483-485, pp. 901-904, 2005
Online since
May 2005
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Price
$32.00
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