Paper Title:
A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
  Abstract

4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
905-908
DOI
10.4028/www.scientific.net/MSF.483-485.905
Citation
E. Danielsson, M. Domeij, H. S. Lee, C. M. Zetterling, M. Östling, A. Schöner, C. Hallin, "A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer", Materials Science Forum, Vols. 483-485, pp. 905-908, 2005
Online since
May 2005
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