A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
| Periodical | Materials Science Forum (Volumes 483 - 485) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 905-908 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.905 |
| Citation | Erik Danielsson et al., 2005, Materials Science Forum, 483-485, 905 |
| Online since | May, 2005 |
| Authors | Erik Danielsson, Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner, Christer Hallin |
| Keywords | Bipolar Junction Transistor (BJT), Epitaxial Regrowth, Extrinsic Base |
| Price | US$ 28,- |
4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.