Paper Title:

A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer

Periodical Materials Science Forum (Volumes 483 - 485)
Main Theme Silicon Carbide and Related Materials 2004
Edited by Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages 905-908
DOI 10.4028/www.scientific.net/MSF.483-485.905
Citation Erik Danielsson et al., 2005, Materials Science Forum, 483-485, 905
Online since May, 2005
Authors Erik Danielsson, Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner, Christer Hallin
Keywords Bipolar Junction Transistor (BJT), Epitaxial Regrowth, Extrinsic Base
Price US$ 28,-
Article Preview
View full size
Abstract

4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.