Paper Title:
Optimisation of Heterostructure Bipolar Transistors in SiC
  Abstract

We present the results of a simulation study on the behaviour of 3C-SiC bipolar transistors fabricated using a 6H-SiC heterojunction emitter. We show that despite the potential barrier originating in the discontinuity of the conduction bands, that npn devices offer a higher common emitter gain in comparison to pnp devices. The base voltage corresponding to the maximum gain of the device is controlled by the tunnelling of carriers across the collector-base junction and is different for both npn and pnp devices.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
913-916
DOI
10.4028/www.scientific.net/MSF.483-485.913
Citation
C. C. Chen, A. B. Horsfall, N. G. Wright, A. G. O'Neill, "Optimisation of Heterostructure Bipolar Transistors in SiC", Materials Science Forum, Vols. 483-485, pp. 913-916, 2005
Online since
May 2005
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Price
$32.00
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