Paper Title:
Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
  Abstract

This paper describes process and device simulation results of SiC floating junction Schottky barrier diodes (Super-SBDs). Two-dimensional process simulation of a SiC device is implemented using the customized ISE’s process simulator “DIOS”. The simulation results reproduce the experimentally observed buried floating junction structure of a SiC Super-SBD. The device simulation method using the anisotropic impact ionization coefficients is formulated. The effect of anisotropic avalanche breakdown field on termination structures of SiC SBDs is examined. Finally, by the device simulation we have shown that the trade-off between the on-state resistance and the breakdown voltage of the super-SBD that contains two drift layers exceeds that of the conventional SBD.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
921-924
DOI
10.4028/www.scientific.net/MSF.483-485.921
Citation
T. Hatakeyama, J. Nishio, T. Shinohe, "Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)", Materials Science Forum, Vols. 483-485, pp. 921-924, 2005
Online since
May 2005
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$32.00
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