SiC 600 V Schottky barrier diodes (SBD) are already available in the market and 1.2 kV have been announced. As the highest market for power devices is foreseen for blocking voltages in the range of 600 up to 1700V, we have developed 1.2kV SBDs. In this paper we report the latest results obtained on those diodes, underlining their high temperature working operation capability (up to 200°C). Forward characteristics, reverse leakage current and switching recovery time dependence on temperature have been analysed. The good thermal behaviour of the 1.2 kV SiC SBDs is compared with that of ultra-fast PN-Si diodes (RHRP8120) of the same breakdown voltage.