Paper Title:
Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers
  Abstract

SiC 600 V Schottky barrier diodes (SBD) are already available in the market and 1.2 kV have been announced. As the highest market for power devices is foreseen for blocking voltages in the range of 600 up to 1700V, we have developed 1.2kV SBDs. In this paper we report the latest results obtained on those diodes, underlining their high temperature working operation capability (up to 200°C). Forward characteristics, reverse leakage current and switching recovery time dependence on temperature have been analysed. The good thermal behaviour of the 1.2 kV SiC SBDs is compared with that of ultra-fast PN-Si diodes (RHRP8120) of the same breakdown voltage.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
929-932
DOI
10.4028/www.scientific.net/MSF.483-485.929
Citation
X. Jordá, D. Tournier, J. Rebollo, J. Millan, P. Godignon, "Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers", Materials Science Forum, Vols. 483-485, pp. 929-932, 2005
Online since
May 2005
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Price
$32.00
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