2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

Okumura, Hajime; Kojima, Kazutoshi; Kuroda, Satoshi; Ohi, Akihiko; Akinaga, Hiroyuki; Arai, Kazuo

Paper Titles

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor, p.77
Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor, p.81
Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD, p.85
4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles, p.89
2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method, p.93
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates, p.97
Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor, p.101
Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth, p.105
Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC , p.109

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Paper Title:

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

Periodical	Materials Science Forum (Volumes 483 - 485)
Main Theme	Silicon Carbide and Related Materials 2004
Edited by	Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages	93-96
DOI	10.4028/www.scientific.net/MSF.483-485.93
Citation	Kazutoshi Kojima et al., 2005, Materials Science Forum, 483-485, 93
Online since	May, 2005
Authors	Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga
Keywords	4H-SiC, Carbon Face, Dislocation, Homoepitaxy, Micropipe, Morphology, On-Axis
Price	US$ 28,-

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Abstract

Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face substrate, specular surface morphology of a wide area of up to 80% of a 2-inch epitaxial wafer was obtained at a low C/Si ratio growth condition of 0.6. The Micropipe in on-axis substrate was indicated to be filled with spiral growth and to be dissociated into screw dislocations during epitaxial growth. It was found that the appearance of basal plane dislocations on the epitaxial layer surface can be prevented by using an on-axis substrate.