2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method |
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| Journal | Materials Science Forum (Volumes 483 - 485) |
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| Volume | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 93-96 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.93 |
| Citation | Kazutoshi Kojima et al., 2005, Materials Science Forum, 483-485, 93 |
| Online since | May, 2005 |
| Authors | Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga |
| Keywords | 4H-SiC, Carbon Face, Dislocation, Homoepitaxy, Micropipe, Morphology, On-Axis |
| Abstract | Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face substrate, specular surface morphology of a wide area of up to 80% of a 2-inch epitaxial wafer was obtained at a low C/Si ratio growth condition of 0.6. The Micropipe in on-axis substrate was indicated to be filled with spiral growth and to be dissociated into screw dislocations during epitaxial growth. It was found that the appearance of basal plane dislocations on the epitaxial layer surface can be prevented by using an on-axis substrate. |
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