Paper Title:
Planar Schottky Microwave Diodes on 4H-SiC
  Abstract

Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the influence on the microwave performance. A maximum extrinsic cut-off frequency of 30.8GHz was achieved for a Tungsten/SiC-Schottky diode. The diode geometry dependence on both the cut-off frequency and the breakdown voltage was investigated. The breakdown voltage was found to be linearly dependent on the anode-cathode distance.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
937-940
DOI
10.4028/www.scientific.net/MSF.483-485.937
Citation
M. Südow, N. Rorsman, P. Å. Nilsson, H. Zirath, "Planar Schottky Microwave Diodes on 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 937-940, 2005
Online since
May 2005
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