Paper Title:
New High-Voltage Unipolar Mode p+ Si/n 4H-SiC Heterojunction Diode
  Abstract

We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is expected to display good reverse recovery because of unipolar action similar to that of a SiC Schottky barrier diode (SBD) when forward biased. The blocking voltage of the HJD is almost equal to the ideal level in the drift region of n- 4H-SiC. In addition, the HJD has the potential for a lower reverse leakage current compared with the SBD. A HJD was fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer of 4H-SiC. Measured reverse blocking voltage was 1600 V with low leakage current. Switching characteristics of the fabricated HJD showed nearly zero reverse recovery with an inductive load circuit.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
953-956
DOI
10.4028/www.scientific.net/MSF.483-485.953
Citation
T. Hayashi, H. Tanaka, Y. Shimoida, S. Tanimoto, M. Hoshi, "New High-Voltage Unipolar Mode p+ Si/n 4H-SiC Heterojunction Diode", Materials Science Forum, Vols. 483-485, pp. 953-956, 2005
Online since
May 2005
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$32.00
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