Paper Title:
SiC Super Junction Power Devices: Modeling and Analysis
  Abstract

In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown that the super-junction concept can reduce the theoretical specific on-resistance by several times to several orders of magnitude for both silicon and SiC. The unique merit of SiC super-junction devices is that the required P and N pillars have a much smaller aspect ratio and may be easier to form than their silicon counterparts. Furthermore, SiC super-junction devices are much less sensitive to charge imbalance issue than silicon SJ devices.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
957-960
DOI
10.4028/www.scientific.net/MSF.483-485.957
Citation
Z.J. Shen, X. Cheng, B. S. Kang, K. So, I. Hshieh, "SiC Super Junction Power Devices: Modeling and Analysis", Materials Science Forum, Vols. 483-485, pp. 957-960, 2005
Online since
May 2005
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Price
$35.00
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