Paper Title:

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

Periodical Materials Science Forum (Volumes 483 - 485)
Main Theme Silicon Carbide and Related Materials 2004
Edited by Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages 965-968
DOI 10.4028/www.scientific.net/MSF.483-485.965
Citation Mrinal K. Das et al., 2005, Materials Science Forum, 483-485, 965
Online since May 2005
Authors Mrinal K. Das, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami, Adrian R. Powell
Keywords BPD, Device Yield, High Voltage (HV), PiN Diode, Vf Drift
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The path to commericializing a 4H-SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H-SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a high yielding process with VF as low as 3.9 V @ 100 A/cm2. Furthermore, incorporation of two independent basal plane dislocation reduction processes (LBPD 1 and LBPD 2) have produced a large number of devices that exhibit a high degree of forward voltage stability with encouraging reverse blocking capability. This results in a total yield (forward, 10 kV blocking, and drift) of >20% for 8.7 mm x 8.7 mm power PiN diode chips—the largest SiC chip reported to date.