8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation |
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| Journal | Materials Science Forum (Volumes 483 - 485) |
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| Volume | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 969-972 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.969 |
| Citation | Koji Nakayama et al., 2005, Materials Science Forum, 483-485, 969 |
| Online since | May, 2005 |
| Authors | Koji Nakayama, Yoshitaka Sugawara, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Katsunori Asano, R. Ishii |
| Keywords | C-Face, Forward Voltage Degradation, PiN Diode |
| Abstract | The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode. |
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