Paper Title:
8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
  Abstract

The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
969-972
DOI
10.4028/www.scientific.net/MSF.483-485.969
Citation
K. Nakayama, Y. Sugawara, H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Asano, R. Ishii, "8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation", Materials Science Forum, Vols. 483-485, pp. 969-972, 2005
Online since
May 2005
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Price
$32.00
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