Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates |
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| Journal | Materials Science Forum (Volumes 483 - 485) |
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| Volume | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 97-100 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.97 |
| Citation | Hidekazu Tsuchida et al., 2005, Materials Science Forum, 483-485, 97 |
| Online since | May, 2005 |
| Authors | Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Kunikaza Izumi, Koji Nakayama, R. Ishii, Katsunori Asano, Yoshitaka Sugawara |
| Keywords | C-Face, Degradation, Dislocation, Epitaxial Growth |
| Abstract | In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers. |
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