Paper Title:
Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV
  Abstract

Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC mode. The device concept as well as the fabrication process is described in detail. Static and dynamic characteristics are shown.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
977-980
DOI
10.4028/www.scientific.net/MSF.483-485.977
Citation
D. Peters, R. Elpelt, R. Schörner, K. O. Dohnke, P. Friedrichs, D. Stephani, "Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV", Materials Science Forum, Vols. 483-485, pp. 977-980, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Konstantin Vassilevski, Konstantinos Zekentes, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
1029
Authors: J. Wu, Leonid Fursin, Yu Zhu Li, Petre Alexandrov, Jian H. Zhao
1109
Authors: Dominique Tournier, Peter Waind, Phillippe Godignon, L. Coulbeck, José Millan, Roger Bassett
Abstract:Due to the significant achievements in SiC bulk material growth and in SiC device processing technology, this semiconductor has received a...
1163
Authors: Ryosuke Ishii, Koji Nakayama, Hidekazu Tsuchida, Yoshitaka Sugawara
Abstract:This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm...
1015
Authors: Akimasa Kinoshita, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC...
893