Paper Title
Authors: Bharat Krishnan, Yaroslav Koshka
Abstract:Recombination-induced passivation (RIP) experiments were conducted on p-type SiC after plasma treatment in deuterium. Higher sensitivity of...
Authors: David Méndez, A. Aouni, Daniel Araújo, Etienne Bustarret, Gabriel Ferro, Yves Monteil
Abstract:The effect of the temperature at which the carbon source is introduced in the reactor on the early stages of the carbonization process is...
Authors: Kun Yuan Gao, Thomas Seyller, Konstantin V. Emtsev, Lothar Ley, Florin Ciobanu, Gerhard Pensl
Abstract:Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance...
Authors: Valeri V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans
Abstract:Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the...
Authors: J.M. Knaup, Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Wolfgang J. Choyke
Abstract:The density of interface traps (Dit) in thermally oxidized SiC is unacceptably high for MOS device fabrication. The most severe problem is...
Authors: Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto, Atsumi Miyashita, Masahito Yoshikawa
Abstract:First-principles calculations for the abrupt SiO2/4H-SiC interfaces accounting for Si-Si bonding and Nitrogen atom termination have been...
Authors: João F. Justo, Cesar R.S. da Silva, I. Pereyra, Lucy V.C. Assali
Abstract:There is growing interest in understanding the properties of SiC-SiO2 interfaces, which can be formed by oxidation of silicon carbide...
Authors: Charíya Virojanadara, Leif I. Johansson
Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, Takeshi Hattori
Abstract:Thermal oxide films on SiC epitaxial (000-1) C-faces have been characterized by angle-resolved photoemission spectroscopy (AR-PES). The...
Authors: Kevin Matocha, Jesse B. Tucker, Ed Kaminsky
Abstract:Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and...
Showing 131 to 140 of 255 Paper Titles