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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

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• p1001 Influence of Irradiation on Excess Currents in SiC pn Structures   [ 144 K ]
  Authors: Anatoly M. Strel'chuk, Vitalii V. Kozlovski, Alexander A. Lebedev, N.Yu. Smirnova
• p1005 A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery   [ 333 K ]
  Authors: Pierre Brosselard, Thierry Bouchet, Dominique Planson, Sigo Scharnholz, Gontran Pâques, Mihai Lazar, Christophe Raynaud, Jean-Pierre Chante, Emil Spahn
• p1009 SiC Materials and Technologies for Sensors Development   [ 6 M ]
  Authors: Phillippe Godignon
• p1015 Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors   [ 684 K ]
  Authors: Giuseppe Bertuccio, Simona Binetti, S. Caccia, R. Casiraghi, Antonio Castaldini, Anna Cavallini, Claudio Lanzieri, Alessia Le Donne, Filippo Nava, Sergio Pizzini, L. Rigutti, G. Verzellesi
• p1021 Measurements of Charge Collection Efficiency of p⁺/n Junction SiC Detectors   [ 59 K ]
  Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Mihai Lazar, Annalisa Di Placido, Roberta Nipoti
• p1025 Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation   [ 75 K ]
  Authors: Nikita B. Strokan, Alexander M. Ivanov, N.S. Savkina, Alexander A. Lebedev, Vitalii V. Kozlovski, Mikael Syväjärvi, Rositza Yakimova
• p1029 High Energy Resolution Detectors Based on 4H-SiC   [ 101 K ]
  Authors: Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov, Nikita B. Strokan, G. Onushkin, Andrey O. Konstantinov, Anders Hallén, Andrej Yu. Kuznetsov
• p1033 High Temperature Hydrocarbon Sensing with Pt-Thin Ga₂O₃-SiC Diodes   [ 73 K ]
  Authors: A. Trinchi, W. Wlodarski, G. Faglia, A. Ponzoni, E. Comini, G. Sberveglieri
• p1039 Modeling of Photon Recycling in GaN-Devices   [ 129 K ]
  Authors: Enn Velmre, Andres Udal, Mihhail Klopov
• p1043 Nickel-Vacancy Complexes in Diamond: An Ab-Initio Investigation   [ 120 K ]
  Authors: Lucy V.C. Assali, R. Larico, W.V.M. Machado, João F. Justo
• p1047 Manganese Impurity in Boron Nitride and Gallium Nitride   [ 76 K ]
  Authors: Lucy V.C. Assali, W.V.M. Machado, João F. Justo
• p1051 Heteroepitaxy of GaN on Silicon: In Situ Measurements   [ 469 K ]
  Authors: A. Krost, Armin Dadgar, F. Schulze, R. Clos, K. Haberland, T. Zettler
• p1057 Structure and Energy of the 90° Partial Dislocations in Wurtzite-GaN   [ 873 K ]
  Authors: G. Savini, M.I. Heggie, C.P. Ewels, N. Martsinovich, R. Jones, A.T. Blumenau
• p1061 High Temperature Contacts to GaN and SiC Based on TiB_x Nanostructure Layers   [ 618 K ]
  Authors: Mykola S. Boltovets, V.N. Ivanov, A.Yu. Avksentyev, A.E. Belyaev, A.G. Borisenko, O.A. Fedorovitsh, Raisa V. Konakova, Ya.Ya. Kudryk, Petr M. Lytvyn, Victor V. Milenin, A.V. Sachenko, Yu.N. Sveschnikov
• p1065 Microscopic Spatial Distribution of Bound Excitons in High-Quality ZnO   [ 441 K ]
  Authors: F. Bertram, Daniel Forster, J. Christen, N. Oleynik, Armin Dadgar, A. Krost