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Authors: Z. Zolnai, A. Ster, N.Q. Khánh, E. Kótai, M. Posselt, Gábor Battistig, T. Lohner, J. Gyulai
Abstract:500 keV nitrogen implantations at different tilt angles (0o, 0.5o, 1.2o, 1.6o, 4o) with respect to the c-axis of 6H-SiC were carried out....
637
Authors: Frank Schmid, Thomas Frank, Gerhard Pensl
Abstract:Hall effect investigations taken on Si+-/N+-, C+-/N+- or Ne+-/N+-co-implanted 4H-SiC layers and deep level transient spectroscopy...
641
Authors: Servane Blanqué, J. Lyonnet, Jean Camassel, R. Pérez, P. Terziyska, Sylvie Contreras, Phillippe Godignon, Narcis Mestres, Jordi Pascual
Abstract:We report a full wafer scale investigation of the activation of nitrogen and phosphorus ions co-implanted at room temperature in a 4H-SiC...
645
Authors: Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi
Abstract:n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the...
649
Authors: P. Zhao, E. Rusli, Jun Hai Xia, Chung Ming Tan, Y. Liu, Chin Che Tin, S.F. Yoon, Weiguang Zhu, J. Ahn
Abstract:In this work, we present results on the study of bonding and concentration of carbon in 4H-SiC MOS structure by x-ray photoelectron...
653
Authors: C. Radtke, Israel J.R. Baumvol, B.C. Ferrera, Fernanda Chiarello Stedile
Abstract:The mechanisms of oxygen incorporation during dry thermal oxidation of 6H-SiC wafers were investigated. Isotopic tracing of oxygen was...
657
Authors: Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato, Atsushi Shimozato, Kenji Fukuda
Abstract:The effects of dislocations in n-type 4H-SiC(0001) epitaxial wafers on the reliability of thermal oxides have been investigated....
661
Authors: Antonella Poggi, Andrea Parisini, Sandro Solmi, Roberta Nipoti
Abstract:The wet oxidation of (0001), Si-face, 6H-SiC pre-amorphised by Ar+ implantation has been investigated in the temperature range between 750...
665
Authors: Ryouji Kosugi, Kenji Fukuda, Kazuo Arai
Abstract:A high temperature rapid thermal processing (HT-RTP) above 1400oC was investigated for use in the gate oxide formation of 4H-SiC by a...
669
Authors: Amador Pérez-Tomás, Dominique Tournier, Phillippe Godignon, Narcis Mestres, José Millan
Abstract:Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been...
673
Showing 151 to 160 of 255 Paper Titles