Silicon Carbide and Related Materials 2004
| Paper Title | Page |
|---|---|
|
Authors: Z. Zolnai, A. Ster, N.Q. Khánh, E. Kótai, M. Posselt, Gábor Battistig, T. Lohner, J. Gyulai |
637 |
|
Authors: Frank Schmid, Thomas Frank, Gerhard Pensl |
641 |
|
Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation Authors: Servane Blanqué, J. Lyonnet, Jean Camassel, R. Pérez, P. Terziyska, Sylvie Contreras, Phillippe Godignon, Narcis Mestres, Jordi Pascual |
645 |
|
Authors: Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi |
649 |
|
Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS Authors: P. Zhao, E. Rusli, Jun Hai Xia, Chung Ming Tan, Y. Liu, Chin Che Tin, S.F. Yoon, Weiguang Zhu, J. Ahn |
653 |
|
Authors: C. Radtke, Israel J.R. Baumvol, B.C. Ferrera, Fernanda Chiarello Stedile |
657 |
|
Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer Authors: Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato, Atsushi Shimozato, Kenji Fukuda |
661 |
|
Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC Authors: Antonella Poggi, A. Parisini, Sandro Solmi, Roberta Nipoti |
665 |
|
High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient Authors: Ryouji Kosugi, Kenji Fukuda, Kazuo Arai |
669 |
|
4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O Authors: Amador Pérez-Tomás, Dominique Tournier, Phillippe Godignon, Narcis Mestres, José Millán |
673 |
