Main Theme:

Silicon Carbide and Related Materials 2004

Volumes 483 - 485
doi: 10.4028/www.scientific.net/MSF.483-485
Paper Titles published in this Main Theme:
Paper Title Page

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC

Authors: D. Siche, M. Albrecht, J. Doerschel, K. Irmscher, H. J. Rost, M. Rossberg, D. Schulz

39

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals

Authors: Soo Hyung Seo, Joon Suk Song, Myung Hwan Oh, Yen Zen Wang

43

SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim

47

Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor

Authors: Shinichi Nishizawa, Michel Pons

53

Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor

Authors: Alessandro Veneroni, Fabrizio Omarini, Maurizio Masi, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza

57

SiC and III-Nitride Growth in Hot-Wall CVD Reactor

Authors: Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul Hassan, Anne Henry, Ivan G. Ivanov, A. Kakanakova-Georgieva, P.O.Å. Persson, Qamar-ul Wahab

61

New Achievements on CVD Based Methods for SiC Epitaxial Growth

Authors: Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero, L. Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, G. Abbagnale, Alessandro Veneroni, Fabrizio Omarini, L. Zamolo, Maurizio Masi, Fabrizio Roccaforte, G. Giannazzo, Salvatore Di Franco, Francesco La Via

67

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

Authors: Rachael L. Myers-Ward, Olof Kordina, Z. Shishkin, Shailaja P. Rao, R. Everly, Stephen E. Saddow

73

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor

Authors: Jie Zhang, Janice Mazzola, Carl Hoff, Yaroslav Koshka, Jeff B. Casady

77

Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor

Authors: Yaroslav Koshka, Huang De Lin, Galyna Melnychuck, Michael S. Mazzola, Jeffery L. Wyatt

81

Showing 11 to 20 of 255 Paper Titles