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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

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• p125 Is the Al Solubility Limit in SiC Temperature Dependent or not?   [ 989 K ]
  Authors: Christophe Jacquier, Gabriel Ferro, Marcin Zielinski, Efstathios K. Polychroniadis, A. Andreadou, Jean Camassel, Yves Monteil
• p129 Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique   [ 1 M ]
  Authors: S. Yoneda, Tomoaki Furusho, H. Takagi, S. Ohta, Shigehiro Nishino
• p133 LPE of Silicon Carbide Using Diluted Si-Ge Flux   [ 913 K ]
  Authors: Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker
• p137 Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor   [ 169 K ]
  Authors: Albert A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, Stephan G. Müller, S.T. Allen
• p141 Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices   [ 473 K ]
  Authors: Bernd Thomas, Christian Hecht
• p147 Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure   [ 212 K ]
  Authors: Johji Nishio, Chiharu Ota, Takashi Shinohe, Kazutoshi Kojima, Hajime Okumura
• p151 Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes   [ 198 K ]
  Authors: H. Fujiwara, Tsunenobu Kimoto, T. Tojo, Hiroyuki Matsunami
• p155 Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices   [ 257 K ]
  Authors: Joseph J. Sumakeris, Mrinal K. Das, Seo Young Ha, Edward Hurt, Kenneth G. Irvine, Michael J. Paisley, Michael J. O'Loughlin, John J. Palmour, Marek Skowronski, H. McD. Hobgood, Calvin H. Carter Jr.
• p159 Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth   [ 103 K ]
  Authors: Can Hua Li, Peter A. Losee, Joseph Seiler, I. Bhat, T. Paul Chow
• p163 Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC   [ 643 K ]
  Authors: Andreas Fissel
• p169 Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si   [ 787 K ]
  Authors: K.L. Safonov, Yu.V. Trushin, Oliver Ambacher, Jörg Pezoldt
• p173 Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy   [ 1 M ]
  Authors: Petia Weih, Henry Romanus, Thomas Stauden, Lothar Spieß, Oliver Ambacher, Jörg Pezoldt
• p177 Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method   [ 770 K ]
  Authors: S. Sugishita, A. Shoji, Yoshihiko Mukai, Taro Nishiguchi, K. Michikami, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino
• p181 Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate   [ 2 M ]
  Authors: Mitsutaka Nakamura, Toshiyuki Isshiki, Taro Nishiguchi, Koji Nishio, Satoru Ohshima, Shigehiro Nishino
• p185 Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method   [ 1 M ]
  Authors: Toshiyuki Isshiki, Mitsutaka Nakamura, Taro Nishiguchi, Koji Nishio, Satoru Ohshima, Shigehiro Nishino