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Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
Abstract:4H-SiC layers have been homoepitaxially grown on off-axis 4H-SiC(000-1) under various conditions by horizontal hot-wall CVD. Improvement of...
85
Authors: Hiroaki Saitoh, Tsunenobu Kimoto
Abstract:Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 1o to 45o has been investigated. On large-off-angled...
89
Authors: Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga
Abstract:Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face...
93
Authors: Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Kunikaza Izumi, Koji Nakayama, R. Ishii, Katsunori Asano, Yoshitaka Sugawara
Abstract:In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing...
97
Authors: Anne Henry, Erik Janzén
Abstract:The phosphorus incorporation into SiC epilayer is studied when varying the CVD process growth parameters and the results are compared with...
101
Authors: Galyna Melnychuck, Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt
Abstract:Mechanisms and consequences of silicon vapor condensation during SiC epitaxial growth or implant annealing with silane overpressure were...
105
Authors: Günter Wagner, D. Schulz, J. Doerschel
Abstract:Growth of 4H-SiC epitaxial layers has been performed in a horizontal hot-wall CVD (chemical vapor deposition) reactor using the...
109
Authors: Ze Hong Zhang, Ying Gao, Arul Arjunan, Eugene Toupitsyn, Priyamvada Sadagopan, Robert M. Kennedy, Tangali S. Sudarshan
Abstract:Thick epilayers up to 60 µm have been grown on ) 0 2 11 ( face SiC substrates at a growth rate of 15 µm/hr by chemical vapor deposition...
113
Authors: Caroline Blanc, Marcin Zielinski, Veronique Soulière, C. Sartel, Sandrine Juillaguet, Sylvie Contreras, Jean Camassel, Yves Monteil
Abstract:We report an experimental investigation of the residual (n-type) and intentional (p-type) doping level of <11-20> epitaxial layers grown on...
117
Authors: C. Sartel, Veronique Soulière, Marcin Zielinski, Yves Monteil, Jean Camassel, S. Rushworth
Abstract:We report on the study of the p-type doping of 4H-SiC material using HexaMethylDiSilane/TriMethylAluminium/Propane (HMDS/TMA/P) system in...
121
Showing 21 to 30 of 255 Paper Titles