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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

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• p381 Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition   [ 237 K ]
  Authors: Masashi Kato, Shun Ichiro Tanaka, Masaya Ichimura, Eisuke Arai, Shun-ichi Nakamura, Tsunenobu Kimoto
• p385 Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide   [ 110 K ]
  Authors: Vitalii V. Kozlovski, Elena V. Bogdanova, Valentin V. Emtsev, Konstantin V. Emtsev, Alexander A. Lebedev, V.N. Lomasov
• p389 Study of Ion Induced Damage in 4H-SiC   [ 113 K ]
  Authors: A. Lo Giudice, P. Oliveira, F. Fizzotti, Claudio Manfredotti, E. Vittone, Stefano Bianco, Giuseppe Bertuccio, R. Casiraghi, M. Jaksic
• p393 Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers   [ 264 K ]
  Authors: Peter J. Wellmann, Ralf Müller, Michel Pons, Aurelie Thuaire, Alexandre Crisci, Michel Mermoux, Laurent Auvray
• p397 Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy   [ 208 K ]
  Authors: Michael S. Mazzola, Swapna G. Sunkari, Janice Mazzola, Hrishikesh Das, Galyna Melnychuck, Yaroslav Koshka, Jeffery L. Wyatt, Jie Zhang
• p401 Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC   [ 341 K ]
  Authors: Julien Pernot, Sylvie Contreras, Jean Camassel, Jean-Louis Robert
• p405 Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay   [ 201 K ]
  Authors: R.J. Kumar, Peter A. Losee, Can Hua Li, Joseph Seiler, I. Bhat, T. Paul Chow, J.M. Borrego, Ronald J. Gutmann
• p409 Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals   [ 131 K ]
  Authors: L. Storasta, R. Aleksiejūnas, M. Sūdžius, Arunas Kadys, T. Malinauskas, Kestutis Jarašiūnas, Björn Magnusson, Erik Janzén
• p413 Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers   [ 160 K ]
  Authors: K. Neimontas, R. Aleksiejūnas, M. Sūdžius, Kestutis Jarašiūnas, J. Peber Bergman
• p417 Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC   [ 100 K ]
  Authors: Sergey A. Reshanov, Gerhard Pensl
• p421 Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt   [ 299 K ]
  Authors: Phillippe Godignon, Christophe Jacquier, Servane Blanqué, Josep Montserrat, Gabriel Ferro, Sylvie Contreras, Marcin Zielinski, Yves Monteil
• p425 Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC   [ 86 K ]
  Authors: R.R Ciechonski, Samuele Porro, Mikael Syväjärvi, Rositza Yakimova
• p429 Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes   [ 135 K ]
  Authors: Francesco La Via, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, L. Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa
• p433 Infrared Gratings Based on SiC/Si-Heterostructures   [ 677 K ]
  Authors: Carsten Rockstuhl, H.P. Herzig, Christian Förster, André Leycuras, Oliver Ambacher, Jörg Pezoldt
• p437 Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission   [ 229 K ]
  Authors: Aurelie Thuaire, Michel Mermoux, Alexandre Crisci, Nicolas Camara, Edwige Bano, Francis Baillet, Etienne Pernot