Paper Title
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Authors: Y. Shishkin, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke
Abstract:A brief historical development of porous SiC and GaN is given. SEM images of nine porous morphologies in 4H, 6H and 3C SiC are shown along...
251
Authors: Yi Chen, Satoko Shoji, S. Sugishita, Satoru Ohshima, Shigehiro Nishino
Abstract:The preparation of porous 4H-SiC by electrochemical etching of SiC crystals was investigated. The porous layer was created at the porous SiC...
257
Authors: V.B. Shuman, N.S. Savkina
Abstract:We have studied effects of thermal treatment in vacuum and wet oxidation on the optical transmission of SiC samples with porous layer on the...
261
Authors: I.L. Shulpina, N.S. Savkina, V.B. Shuman, V.V. Ratnikov, Mikael Syväjärvi, Rositza Yakimova
Abstract:The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two...
265
Authors: Marina G. Mynbaeva, A. Lavrent'ev, I. Kotousova, A.N. Volkova, K. Mynbaev, Alexander A. Lebedev
Abstract:Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at...
269
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, L. Ke, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke
Abstract:The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is...
273
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, I. Vickridge, Yong Wei Song, S. Dhar, Leonard C. Feldman, John R. Williams, L. Ke, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke
Abstract:The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in...
277
Authors: Sakwe Aloysius Sakwe, Z.G. Herro, Peter J. Wellmann
Abstract:Etching temperature and time are important parameters in the etching of SiC single crystals in molten KOH for defect studies. However,...
283
Authors: H. Colder, M. Morales, Richard Rizk, I. Vickridge
Abstract:Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to...
287
Authors: Y. Morilla, J. García López, Gábor Battistig, J.L. Cantin, Juan Carlos Cheang-Wong, Hans Jürgen von Bardeleben, M.A. Respaldiza
Abstract:6H-SiC single crystalline substrates were implanted at room temperature with 2 MeV Al2+ ions to fluences from 2×1014 Al2+ cm-2 to 7×1014...
291
Showing 61 to 70 of 255 Paper Titles