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Authors: Gabriel Ferro, D. Panknin, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa, J. Stoemenos
Abstract:Thin 3C-SiC films epitaxially grown on Si-substrate are substantially improved by the FLASIC process, which involves irradiation with flash...
295
Authors: Hosni Idrissi, Maryse Lancin, Joel Douin, G. Regula, Bernard Pichaud
Abstract:4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introduced-defects were identified by Weak Beam...
299
Authors: Sergey Y. Davydov
Abstract:The pressure dependences of the second-order elastic constants ij C and the velocity of sound in 3C-SiC and 2H-SiC crystals are calculated in...
303
Authors: Christoph Seitz, Z.G. Herro, Boris M. Epelbaum, Albrecht Winnacker, Rainer Hock, Andreas Magerl
Abstract:A structural characterisation of the first [01-15] grown 6H SiC crystals is presented. They show a different micro domain structure outside...
307
Authors: G. Agrosì, R.A. Fregola, A. Monno, Eugenio Scandale, G. Tempesta
Abstract:X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended structural defects in 6H-SiC bulky crystals....
311
Authors: Tomohisa Kato, Kazutoshi Kojima, Shin Ichi Nishizawa, Kazuo Arai
Abstract:We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The...
315
Authors: Efstathios K. Polychroniadis, Alkyoni Mantzari, A. Freudenberg, Jürgen Wollweber, R. Nitschke, Thomas Frank, Gerhard Pensl, Adolf Schöner
Abstract:The aim of the present work is to grow 3C-SiC on (0001) 6H-SiC seeds using the Physical Vapour Transport (PVT) method and to study the...
319
Authors: Syunsuke Izumi, Hidekazu Tsuchida, Takeshi Tawara, Isaho Kamata, Kunikaza Izumi
Abstract:We investigated the structure of the in-grown stacking faults (SFs) in the 4H-SiC epilayers. The in-grown SFs exhibited the...
323
Authors: Augustinas Galeckas, H. K.-Nielsen, Jan Linnros, Anders Hallén, Bengt G. Svensson, P. Pirouz
Abstract:The effects of hydrogen and proton irradiation on stacking fault formation in 4H-SiC are investigated by an optical pump-probe method of...
327
Authors: Jean Camassel, Sandrine Juillaguet
Abstract:In 4H-SiC, 3C stacking fault (SF) behaves like a finite thickness type II quantum well. As a consequence, it can bind two excitons per well....
331
Showing 71 to 80 of 255 Paper Titles