Paper Title:
Growth Kinetics of Intermetallic Compound and Interfacial Reactions in Pb-Free Flip Chip Solder Bump during Solid State Isothermal Aging
  Abstract

In the present work, the growth kinetics of intermetallic compound layer formed in Sn-3.5Ag flip chip solder joints by solid-state isothermal aging was examined at temperatures between 80 and 150 °C for 0 to 60 days. The bumping for the flip chip devices was performed using an electroless under bump metallization. The quantitative analyses were performed on the intermetallic compound layer thickness as a function of aging time and aging temperature. The layer growth of the Ni3Sn4 intermetallic compound followed a parabolic law within a given temperature range. As a whole, because the value of the time exponent (n) is approximately equal to 0.5, the layer growth of the intermetallic compound was mainly controlled by diffusion mechanism in the temperature range studied. The apparent activation energy of the Ni3Sn4 intermetallic was 49.63 kJ/mol.

  Info
Periodical
Materials Science Forum (Volumes 486-487)
Edited by
Hyung Sun Kim, Sang-Yeop Park, Bo Young Hur and Soo Wohn Lee
Pages
273-276
DOI
10.4028/www.scientific.net/MSF.486-487.273
Citation
D. G. Kim, H. S. Jang, Y. J. Kim, S. B. Jung, "Growth Kinetics of Intermetallic Compound and Interfacial Reactions in Pb-Free Flip Chip Solder Bump during Solid State Isothermal Aging", Materials Science Forum, Vols. 486-487, pp. 273-276, 2005
Online since
June 2005
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