Paper Title:
Ferroelectric Properties of Lead-Free (Bi,La)4Ti3O12 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device
  Abstract

Ferroelectric properties of Pb-free (Bi,La)4Ti3O12 (BLT) films were optimized on a newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12, which was analyzed by ICP-MS method. The switchable polarization obtained in a 100nm-thick BLT film was about 20 uC/cm2 at the 3 V applied voltage, and the optimized BLT film showed little fatigue loss about 10% up to 1×1011 cycles. The imprint properties of the BLT film were also characterized at 25 °C and 90 °C operating temperature after 125 °C data storage. Regardless of operating temperature, switchable polarization of BLT had a sufficiently large margin for device operation up to 10 years.

  Info
Periodical
Materials Science Forum (Volumes 486-487)
Edited by
Hyung Sun Kim, Sang-Yeop Park, Bo Young Hur and Soo Wohn Lee
Pages
285-288
DOI
10.4028/www.scientific.net/MSF.486-487.285
Citation
K.W. Cho, N.K. Kim, S.H. Oh, E.S. Choi, H.J. Sun, S.J. Yeom, K.N. Lee, S. S. Lee, S. K. Hong, S.K. Choi, T. W. Hong, I. H. Kim, J.I. Lee, S. C. Ur, Y. G. Lee, S. L. Ryu, S. Y. Kweon, "Ferroelectric Properties of Lead-Free (Bi,La)4Ti3O12 Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device", Materials Science Forum, Vols. 486-487, pp. 285-288, 2005
Online since
June 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: J.H. Choi, H.S. Yoo, K.W. Cho, N.K. Kim, S.H. Oh, E.S. Choi, S.J. Yeom, H.J. Sun, S.S. Lee, K.N. Lee, Suk Kyoung Hong, Tae Whan Hong, Il Ho Kim, Sung Lim Ryu, Soon Young Kweon
Abstract:A 16Mb 1-transistor /1-capacitor (1T1C) FeRAM device was fabricated with lead-free Bi3.25La0.75Ti3.0O12 (BLT) capacitors. The key integration...
530
Authors: Y.H. Sun, X.B. Liu, Min Chen, J. Liu, S. Chen, Z.M. Wan
Abstract:Nd-doped bismuth titanate Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method and spin-coating...
146
Authors: Young Moon Kim, G.E. Jang, N.K. Kim, S.J. Yeom, Soon Young Kweon
Abstract:A 16Mb 1T1C FeRAM device was successfully fabricated with the lead-free BLT capacitors. The average value of the switchable polarization...
577
Authors: M.W. Lee, Sung Lim Ryu, S.J. Yeom, Soon Young Kweon
Abstract:Ferroelectric properties of Lead-free (Bi,La)4Ti3O12 (BLT) films were evaluated on the newly developed MTP (Merged Top-electrode and...
109