Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD |
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| Journal | Materials Science Forum (Volumes 490 - 491) |
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| Volume | Residual Stresses VII, ICRS7 |
| Edited by | Sabine Denis, Takao Hanabusa, Bob Baoping He, Eric Mittemeijer, JunMa Nan, Ismail Cevdet Noyan, Berthold Scholtes, Keisuke Tanaka, KeWei Xu |
| Pages | 601-606 |
| DOI | 10.4028/www.scientific.net/MSF.490-491.601 |
| Citation | Hajime Hirose et al., 2005, Materials Science Forum, 490-491, 601 |
| Online since | July, 2005 |
| Authors | Hajime Hirose, Shinya Suzuki, Masahide Gotoh, Toshihiko Sasaki |
| Keywords | Arc Ion Plating (AIP), Full-Width at Half Maximum, Internal Stress Balance, Ion Bombardment, Penetration Depth, Residual Stress, X-Ray Diffraction (XRD) |
| Abstract | In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion. |
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