Paper Title:
Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process
  Abstract

Indium tin oxide (ITO) thin films were deposited on glass substrates via sol-gel spin coating process from a mixed solution of Indium (Ⅲ) acetylacetonate and Tin (Ⅳ) iso-propoxide. Then, ITO thin films were fired at 500°C, and then annealed at 500°C for 30 min with the sequential annealing process; VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 gas. The effects of the different annealing processes on the surface morphologies and sheet resistance of ITO thin films were investigated. Sheet resistance values of ITO thin films treated under VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 annealing process were 1.25 kohm/sq., 3.18 kohm/sq. and 4.92 kohm/sq., respectively. Actually, the sequential atmosphere gases and non-oxidizing gas, which were used in annealing process influenced the microstructural features or surface morphologies of ITO thin films: grain size and surface roughness. Thus, it was presumed that the sequential annealing condition influenced the densification behavior in the microstructural evolution of ITO thin films.

  Info
Periodical
Materials Science Forum (Volumes 492-493)
Edited by
Omer Van der Biest, Michael Gasik, Jozef Vleugels
Pages
325-330
DOI
10.4028/www.scientific.net/MSF.492-493.325
Citation
H.-W. Han, Y. H. Yun, S. C. Choi, "Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process ", Materials Science Forum, Vols. 492-493, pp. 325-330, 2005
Online since
August 2005
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