Paper Title:
Intersublevel Absorption in Stacked n-Type Doped Self-Assembled Quantum Dots
  Abstract

The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light.

  Info
Periodical
Edited by
Dragan P. Uskokovic, Slobodan K. Milonjic, Djan I. Rakovic
Pages
37-42
DOI
10.4028/www.scientific.net/MSF.494.37
Citation
D. Veljković, M. Tadić, F.M. Peeters, "Intersublevel Absorption in Stacked n-Type Doped Self-Assembled Quantum Dots", Materials Science Forum, Vol. 494, pp. 37-42, 2005
Online since
September 2005
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$32.00
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