Application of In Situ HREM to Study Crystallization in Materials |
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| Journal | Materials Science Forum (Volume 494) |
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| Volume | Current Research in Advanced Materials and Processes |
| Edited by | Dragan P. Uskokovic, Slobodan K. Milonjic, Djan I. Rakovic |
| Pages | 7-12 |
| DOI | 10.4028/www.scientific.net/MSF.494.7 |
| Citation | R. Sinclair et al., 2005, Materials Science Forum, 494, 7 |
| Online since | September, 2005 |
| Authors | R. Sinclair, Kyung Hoon Min, U. Kwon |
| Keywords | Crystallization, High Resolution Imaging, Silicon, Tantalum Oxide, TEM |
| Abstract | A review is given of the application of in situ transmission electron microscopy to study various processes associated with the crystallization of amorphous thin films. Solid phase epitaxial regrowth of ion-implanted silicon is compared with nucleation and growth in deposited thin films. The mechanism of metal-mediated crystallization is deduced directly from high resolution recordings, and the kinetics of tantalum oxide devitrefication are obtained. The advantages of direct in situ observation are described |
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